Tritiated Amorphous Silicon Betavoltaic Devices
نویسنده
چکیده
When prepared by conventional evaporation or sputtering, thin films of amorphous silicon contain a large concentration of defects and microvoids.3,4 These give rise to localized states in the energy gap of the material.3,4 Plasma-enhanced chemical vapor deposition (PECVD), using silicon hydrides, significantly reduces the number of defects and thereby lowers the concentration of localized states in the energy gap.35 It is well known that hydrogen is responsible for defect passivation.35 Hydrogen atoms incorporated into these films satisfy the covalent bonds at defects and microvoids and also allow the lattice to relax, thereby reducing the density of localized states by several orders of magnitude.35
منابع مشابه
Tritiated amorphous silicon betavoltaic devices - Circuits, Devices and Systems, IEE Proceedings [see also IEE Proceedings G- Circuits, Devices and
The introduction of tritium into hydrogenated amorphous silicon has given rise to a novel material with interesting physical properties and potential applications. Tritium undergoes radioactive decay, transforming into He and emitting an electron with average energy 5.7keV, at a rate equivalent to a half-life of 12.3 years. The decay of tritium results in the creation of electron– hole pairs an...
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